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? 1997 data sheet bipolar analog integrated circuit m pc324 low power quad operational amplifier description the m pc324 is a quad operational amplifier which is designed to operate from a single power supply over a wide range of voltages. operation from split power supplies is also possible and the power supply current drain is very low. further advantage, the input common- mode voltage can also swing to ground in the linear mode. document no. g11763ej3v0ds00 (3rd edition) (previous no. ic-1985) date published april 1997 n printed in japan features ? internal frequency compensation ? wide output voltage swing v C to v + C1.5 v ? common mode input voltage range includes v C ? wide supply range 3 v to 30 v (single) 1.5 v to 15 v (split) ? output short circuit protection equivalent circuit (1/4 circuit) pin configuration (top view) the mark shows major revised points. the information in this document is subject to change without notice. ordering information part number package m pC324C 14-pin plastic dip (300 mil) m pc324g2 14-pin plastic sop (225 mil) output v + v i i i n q 2 q 1 q 9 q 10 q 11 q 13 q 6 q 5 q 7 q 12 q 4 q 3 q 8 r sc c c 6 a 6 a 100 a 50 a m m m m 1 2 3 4 5 6 7 14 13 12 11 10 9 8 out1 i i1 i n1 v + i n2 i i2 out2 out4 i i4 i n4 v ? i n3 i i3 out3 14 23 ?+ ?+ + + pC324C, 324g2 m
m pc324 2 absolute maximum ratings (t a = 25 c) parameter symbol ratings unit voltage between v + and v C note 1 v + Cv C C0.3 to +32 v differential input voltage v id 32 v input voltage note 2 v i v C C0.3 to v C +32 v output voltage note 3 v o v C C0.3 to v + +0.3 v power dissipation c package note 4 p t 570 mw g2 package note 5 550 mw output short circuit duration note 6 indefinite sec operating ambient temperature t a C20 to +80 c storage temperature t stg C55 to + 125 c notes 1. reverse connection of supply voltage can cause destruction. 2. the input voltage should be allowed to input without damage or destruction independent of the magnitude of v + . either input signal should not be allowed to go negative by more than 0.3 v. the normal operation will establish when the both inputs are within the common mode input voltage range of electrical characteristics. 3. this specification is the voltage which should be allowed to supply to the output terminal from external without damage or destructive. even during the transition period of supply voltage, power on/off etc., this specification should be kept. the output voltage of normal operation will be the output voltage swing of electrical characteristics. 4. thermal derating factor is C7.6 mw/ c when operating ambient temperature is higher than 50 c. 5. thermal derating factor is C5.5 mw/ c when operating ambient temperature is higher than 25 c. 6. pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, note 4 and note 5. recommended operating conditions parameter symbol min. typ. max. unit supply voltage (split) v 1.5 15 v supply voltage (v C = gnd) v + 330v electrical characteristics (t a = 25 c, v + = 5 v, v C = gnd) parameter symbol conditions min. typ. max. unit input offset voltage v io r s = 0 w 2 7mv input offset current i io 5 50 na input bias current note 7 i b 45 250 na large single voltage gain a v r l 3 2 k w 25 100 v/mv supply current i cc r l = , i o = 0 a, all amplifiers 1.0 2 ma common mode rejection ratio cmr 65 85 db supply voltage rejection ratio svr 65 100 db output voltage swing v o r l = 2 k w (connect to gnd) 0 v + C 1.5 v common mode input voltage range v icm 0v + C 1.5 v output current (source) i o source v in + = +1 v, v in C = 0 v 20 40 ma output current (sink) i o sink v in C = +1 v, v in + = 0 v 10 20 ma v in C = +1 v, v in + = 0 v, v o = 200 mv 12 50 m a channel separation f = 1 khz to 20 khz 120 db notes 7. input bias currents flow out from ic. because each currents are base current of pnp-transistor on input stage.
m pc324 3 typical performance characteristics (t a = 25 c, typ.) 1000 800 600 400 200 4 3 2 1 0 20 40 60 80 100 0 10 20 30 40 t a - operating ambient temperature - ? p t - total power dissipation - mw power dissipation i cc - supply current - ma supply current v + - supply voltage - v (v = gnd) t a = ?0 ? t a = 0 to 70 ? 324g2 324c 100 75 50 25 0 10 20 30 40 v + - supply voltage - v (v = gnd) i b - input bias current - na input bias current t a = +25 ? ? + a v + i cc 3 2 1 0 0 10 20 30 50 v io - input offset voltage - mv input offset voltage v + - supply voltage - v (v = gnd) t a = 25 ? 0 40 100 ?0 ? ? ? ? 1 0 2 3 4 5 input offset voltage v + = 5 v t a - operating ambient temperature - ? 100 80 60 40 20 0 ?0 0 50 100 input bias current t a - operating ambient temperature - ? v + = +15 v v = gnd v io - input offset voltage - mv i b - input bias current - na
m pc324 4 140 120 100 80 60 40 20 0 1 10 100 1 k 10 k 100 k 1 m 10 m f - frequency - hz open loop frequency response a v - open loop voltage grain - db v + = 10 to 15 v v + = 30 v v + /2 v o v + v in 0.1 f 10 m w + 20 15 10 5 0 1 k 3 5 10 k 30 50 100 k 300 500 1 m large signal frequency response v om - output voltage swing - v p-p v o v in 100 k w 1 k w +15 v 7 v + 2 k w 160 120 80 40 70 60 50 40 30 0 10203040 ?0 60 20 80 open loop voltage gain t a - operating ambient temperature - ? i o short - output short circuit current - ma output short circuit current 040 i o short + v + - supply voltage - v (v = gnd) r l = 20 k w r l = 2 k w m f - frequency - hz a v - open voltage gain - db output sink current limit v o - output voltage - v 10 1.0 0.1 0.01 0.01 0.1 1.0 10 100 i o sink - output sink current - ma v + = 15 v + v o v + /2 v + i o sink output source current limit d v o - output voltage to v + - v 5 4 1 0 0.01 0.1 1.0 10 100 i o source - output source current - ma + i o source v + /2 v + d v o 3 2
m pc324 5 4 3 2 1 0 3 2 1 0 20 40 60 80 time - s r l 3 2 k w v + = 15 v input voltage - v output voltage - v 120 100 80 60 40 20 0 100 1 k 10 k 100 k 1 m f - frequency - hz cmr - common mode rejection ratio - db common mode rejection ratio 0.2 ?0 0 50 100 t a - operating ambient temperature - ? sr - slew rate - v/ s slew rate 0.3 0.1 0 v = ?5 v v o = ?0 v sr ? sr + voltage follower pulse response m m
m pc324 6 package drawings 14pin plastic dip (300 mil) item millimeters inches notes 1) each lead centerline is located within 0.25 mm (0.01 inch) of its true position (t.p.) at maximum material condition. p14c-100-300b1-1 n 0.25 0.01 r 0~15 0~15 a 20.32 max. 0.800 max. b 2.54 max. 0.100 max. f 1.2 min. 0.047 min. g 3.6?.3 0.142?.012 j 5.08 max. 0.200 max. k 7.62 (t.p.) 0.300 (t.p.) c 2.54 (t.p.) 0.100 (t.p.) d 0.50?.10 0.020 +0.004 ?.005 h 0.51 min. 0.020 min. i 4.31 max. 0.170 max. l 6.4 0.252 m 0.25 0.010 +0.004 ?.003 +0.10 ?.05 2) ltem "k" to center of leads when formed parallel. m r m i h g f d n c b k 1 7 14 8 l a j
m pc324 7 14 pin plastic sop (225 mil) a c d m g note each lead centerline is located within 0.12 mm (0.005 inch) of its true position (t.p.) at maximum material condition. p detail of lead end m 1 7 14 8 f e b h i k l j n item millimeters inches a b c e f g h i j 10.46 max. 1.27 (t.p.) 1.8 max. 1.49 6.5?.3 1.42 max. 0.12 1.1 4.4 m 0.1?.1 n 0.412 max. 0.056 max. 0.004?.004 0.071 max. 0.059 0.256?.012 0.173 0.043 0.005 0.050 (t.p.) s14gm-50-225b, c-4 p 3 3 +7 d 0.40 0.016 +0.10 ?.05 k 0.15 0.006 +0.10 ?.05 l 0.6?.2 0.024 0.10 ? +7 ? 0.004 +0.008 ?.009 +0.004 ?.002 +0.004 ?.003
m pc324 8 recommended soldering conditions when soldering this product, it is highly recommended to observe the conditions as shown below. if other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. for more details, refer to our document semiconductor device mounting technology manual (c10535e) . surface mount device m pc324g2: 14-pin plastic sop (225 mil) process conditions symbol infrared ray reflow peak temperature: 230 c or below (package surface temperature), ir30-00-1 reflow time: 30 seconds or less (at 210 c or higher), maximum number of reflow processes: 1 time. vapor phase soldering peak temperature: 215 c or below (package surface temperature), vp15-00-1 reflow time: 40 seconds or less (at 200 c or higher), maximum number of reflow processes: 1 time. wave soldering solder temperature: 260 c or below, flow time: 10 seconds or less, ws60-00-1 maximum number of flow processes: 1 time, pre-heating temperature: 120 c or below (package surface temperature). partial heating method pin temperature: 300 c or below, C heat time: 3 seconds or less (per each side of the device). caution apply only one kind of soldering condition to a device, except for partial heating method, or the device will be damaged by heat stress. through-hole device m pC324C: 14-pin plastic dip (300 mil) process conditions wave soldering solder temperature: 260 c or below, (only to leads) flow time: 10 seconds or less. partial heating method pin temperature: 300 c or below, heat time: 3 seconds or less (per each lead.) caution for through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered.
m pc324 9 reference documents quality grades on nec semiconductor devices c11531e semiconductor device mounting technology manual c10535e ic package manual c10943x guide to quality assuarance for semiconductor devices mei-1202 semiconductors selection guide x10679e nec semiconductor device reliability/ iei-1212 quality control system - standard linear ic
m pc324 10 [memo]
m pc324 11 [memo]
m pc324 2 [memo] no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 96.5

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